vorl?ufige daten preliminary data t c =80c i c,nom. 10 a t c = 25 c i c 17 a min. typ. max. - 1,95 2,55 v - 2,20 - v date of publication: 2003-01-24 revision: 2.0 v ce = gate threshold voltage rckwirkungskapazit?t reverse transfer capacitance v ce = v ge , t vj = 25c, i c = eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v nf - 0,04 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - c res v ge = -15v...+15v q g - gate charge gateladung prepared by: p. kanschat kollektor emitter reststrom approved: m. hierholzer collector emitter cut off current v, v ge = 0v, t vj = 25c 600 v ce = 0v, v ge = 20v, t vj = 25c v ges repetitive peak forward current v cesat charakteristische werte / characteristic values periodischer spitzenstrom v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung rms, f= 50hz, t= 1min transistor wechselrichter / transistor inverter kv v ces v v isol v a2s w i2t 2,5 technische information / technical information FS10R06XL4 igbt-module igbt-modules gate emitter spitzenspannung gate schwellenspannung gate emitter peak voltage dauergleichstrom kollektor emitter s?ttigungsspannung dc forward current insulation test voltage i2t value dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25 c a repetitive peak collector current periodischer kollektor spitzenstrom p tot t c = 25c, transistor gesamt verlustleistung total power dissipation t p = 1ms, t c = 80 c t p = 1ms i frm a a i crm 6,5 grenzlastintegral 12 i f collector emitter saturation voltage 0,4 v ge = 15v, t vj = 25c, i c = i c,nom v ge = 15v, t vj = 125c, i c = i c,nom ma 4,5 - v nf 0,45 - 0,05 - c 5,5 - - na gate emitter leakage current gate emitter reststrom i ges - 400 v ge(th) c ies i ces 600 20 76 + 20 10 20 -5ma 1 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules min. typ. max. i c = 10 27 - 20 - ns 27 - 21 - ns i c = 10 27 - 7 - ns 27 - 8 - ns i c = 10 27 - 80 - ns 27 - 110 - ns i c = 10 27 - 18 - ns 27 - 25 - ns i c = 10 r g = 27 25 nh i c = 10 r g = 27 25 nh v cc = i f = 10 - 1,85 2,25 v i f = 10 - 1,90 - v i f = 10 a/s v r = -26- a v r = -27- a i f = 10 a/s v r = - 0,55 - c v r = - 0,95 - c i f = 10 a/s v r = - 0,15 - mj v r = - 0,2 - mj rckstromspitze peak reverse recovery current 300 v 300 v, v ge = -10v, t vj = 25c 300 v 300 v, v ge = -10v, t vj = 125c charakteristische werte / characteristic values einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) 300 v ? , t vj = 125c ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c ? , t vj = 125c a, v ge = 0v, t vj = 25c a, v ge = 0v, t vj = 125c ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c a, v cc = 300 300 lead resistance, terminal-chip v f forward voltage a, v cc = e off t r a, v cc = 300 v v ge = 15v, r g = v a, v cc = v ge = 15v, r g = anstiegszeit (induktive last) rise time (inductive load) v 300 ? , t vj = 25c v ge = 15v, r g = abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) einschaltverlustenergie pro puls a, v cc = 1500 300 v, v ge = -10v, t vj = 25c a, -di f /dt = ? , t vj = 25c transistor wechselrichter / transistor inverter v ge = 15v, r g = m ? charakteristische werte / characteristic values mj -mj e on 0,25 t d,off - t f sc data leitungswiderstand, anschluss-chip a, v cc = ? , t vj = 125c, l = 360 v, v cemax =v ces -l ce |di/dt| ? , t vj = 125c, l = diode wechselrichter / diode inverter ausschaltenergie pro puls reverse recovery energy turn off energy loss per pulse v, v ge = -10v, t vj = 125c fallzeit (induktive last) fall time (inductive load) kurzschlussverhalten t p 10sec, v ge 15v, t vj = 125c, nh stray inductance module modulinduktivit?t l ce - 25 - a 40 - e rec i rm - - i sc - t d,on 300 v, v ge = -10v, t vj = 125c a, -di f /dt = 1500 - q r sperrverz?gerungsladung recovered charge durchlassspannung - 0,30 8 turn on energy loss per pulse ausschaltverlustenergie pro puls r cc/ee t c = 25c a, -di f /dt = 1500 300 v, v ge = -10v, t vj = 25c 2 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules min. typ. max. - - 1,65 k/w - - 3,80 k/w - 2,20 - k/w - 4,50 - k/w - 0,70 - k/w - 1,00 - k/w creepage distance innere isolation internal insulation cti comperative tracking index f t c = 25c p 25 power dissipation thermal resistance, junction to heat sink; dc h?chstzul?ssige sperrschichttemp. thermische eigenschaften / thermal properties r thch bergangs-w?rmewiderstand; dc thermal resistance, case to heat sink; dc -5 - 5 verlustleistung t c = 100c, r 100 = 493 ? ? r/r deviation of r 100 - - abweichung von r 100 w?rmewiderstand; dc % - 5 r 25 k ? - t c = 25c rated resistance charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand 20 -- -40 - 125 - 3375 - 150 mw k paste = 1 w/m*k / grease = 1 w/m*k transistor wechselr. / transistor inverter diode wechselrichter / diode inverter r thjc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter paste = 1 w/m*k / grease = 1 w/m*k b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 t vjmax b-value innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter r thjh -40 weight lagertemperatur gewicht kriechstrecke anschluss - khlk?rper 20..50 mechanische eigenschaften / mechanical properties mm - 125 c g n 25 operation temperature maximum junction temperature betriebstemperatur terminal to terminal anschluss - anschluss terminal to heat sink storage temperature 10,5 anschluss - anschluss luftstrecke anschluss - khlk?rper anpresskraft pro feder mounting force per clamp terminal to terminal clearance distance terminal to heat sink mm mm 5mm 5 9 225 c g al 2 o 3 t stg t op c 3 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules i c = f(v ce ) v ge = 15v t vj = 125c output characteristic (typical) a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) ausgangskennlinie (typisch) output characteristic (typical) 0 5 10 15 20 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 5 10 15 20 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v 4 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward characteristic of inverse diode (typical) bertragungscharakteristik (typisch) transfer characteristic (typical) 0 5 10 15 20 5678910111213 v ge [v] i c [a] tvj = 25c tvj = 125c 0 5 10 15 20 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules schaltverluste (typisch) switching losses (typical) schaltverluste (typisch) switching losses (typical) e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge = 15v, r gon =r goff = 27 ? , v ce = 300v, t vj = 125c e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge = 15v, i c = 10a, v ce = 300v, t vj = 125c 0 0,25 0,5 0,75 1 0 5 10 15 20 i c [a] e [mj] eon eoff erec 0 0,2 0,4 0,6 0,8 1 0 25 50 75 100 125 150 175 200 225 250 275 r g [ ? ] e [mj] eon eoff erec 6 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules transienter w?rmewiderstand transient thermal impedance i r i [k/kw]: igbt i [s]: igbt r i [k/kw]: diode i [s]: diode sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, t j =125c, r g = 27 ? 192,0 640,0 z thjh = f (t) 23 2520,0 0,000307 0,00484 0,10644 0,14203 1 270,0 0,000232 0,00215 900,0 0,09946 1792,0 4 810,0 0,12318 576,0 0 10 20 30 0 200 400 600 v ce [v] i c [a] ic, chip ic, modul 0,10 1,00 10,00 0,001 0,01 0,1 1 10 t (s) z thjh (k/w) zth:igbt zth:diode 7 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
vorl?ufige daten preliminary data technische information / technical information FS10R06XL4 igbt-module igbt-modules mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. schaltbild circuit diagram ? geh?usema?e package outline bohrplan drilling layout 8 (8) www. datasheet datasheet datasheet datasheet 4u 4u4u 4u .com
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